? 2008 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 75 a v ge = 0v t j = 125 c 750 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 90a, v ge = 15v, note 1 1.55 1.80 v t j = 125 c 1.62 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c (chip capability) 90 a i cm t c = 25 c, 1ms 500 a ssoa v ge = 15v, t vj = 125 c, r g = 2 i cm = 180 a (rbsoa) clamped inductive load @ v ce 600v p c t c = 25 c 660 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13 / 10 nm/lb.in. t l maximum lead temperature for soldering 300 c t sold 1.6mm (0.062 in.) from case for 10s 260 c weight 6 g ds99994(05/08) v ces = 600v i c110 = 90a v ce(sat) 1.8v t fi(typ) = 148ns g = gate c = collector e = emitter tab = collector genx3 tm 600v igbt medium speed low vsat pt igbts 5-40 khz switching preliminary technical information features z optimized for low conduction and switching losses z square rbsoa z international standard package advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts IXGH90N60B3 to-247 ad (ixgh) g c e c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXGH90N60B3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 55 90 s c ies 8285 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 525 pf c res 140 pf q g 172 nc q ge i c = 90a, v ge = 15v, v ce = 0.5 ? v ces 28 nc q gc 63 nc t d(on) 31 ns t ri 47 ns e on 1.32 mj t d(off) 150 ns t fi 148 250 ns e off 1.37 2.40 mj t d(on) 29 ns t ri 43 ns e on 1.93 mj t d(off) 220 ns t fi 253 ns e off 2.80 mj r thjc 0.19 c/w r thcs 0.21 c/w inductive load, t j = 25 c i c = 60a, v ge = 15v v ce = 480v, r g = 2 inductive load, t j = 125 c i c = 60a,v ge = 15v v ce = 480v,r g = 2 note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 e ? p to-247 ad outline
? 2008 ixys corporation, all rights reserved fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v ce - volts i c - amperes v ge = 15 v 13 v 11 v 5v 9v 7v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 012345678910 v ce - volts i c - amperes v ge = 15v 11v 9v 5v 7v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 140 160 180 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ce - volts i c - amperes v ge = 15 v 13 v 11 v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 180a i c = 90a i c = 45a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5 6 7 8 9 101112131415 v ge - volts v ce - volts i c = 180 a 90 a 45 a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 4.04.55.05.56.06.57.07.5 v ge - volts i c - amperes t j = 150oc 25oc - 40oc IXGH90N60B3
ixys reserves the right to change limits, test conditions, and dimensions. IXGH90N60B3 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 200 200 250 300 350 400 450 500 550 600 650 v ce - volts i c - amperes t j = 125oc r g = 2 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v ge - volts v ce = 300v i c = 90a i g = 10 ma fig. 9. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2008 ixys corporation, all rights reserved fig. 12. inductive switching energy loss vs. gate resistance 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 2 3 4 5 6 7 8 9 101112131415 r g - ohms e off - millijoules 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 90a i c = 60a fig. 17. inductive turn-off switching times vs. junction temperature 120 140 160 180 200 220 240 260 280 300 320 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 130 140 150 160 170 180 190 200 210 220 230 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 480v i c = 90a, 60a fig. 15. inductive turn-off switching times vs. gate resistance 240 250 260 270 280 290 300 2 3 4 5 6 7 8 9 10 11 12 13 14 15 r g - ohms t f - nanoseconds 100 200 300 400 500 600 700 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 90a i c = 60a fig. 13. inductive switching energy loss vs. collector current 0 1 2 3 4 5 6 7 8 30 40 50 60 70 80 90 i c - amperes e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 1 2 3 4 5 6 7 8 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 480v i c = 90a i c = 60a fig. 16. inductive turn-off switching times vs. collector current 0 50 100 150 200 250 300 350 400 450 30 40 50 60 70 80 90 i c - amperes t f - nanoseconds 120 140 160 180 200 220 240 260 280 300 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc IXGH90N60B3
ixys reserves the right to change limits, test conditions, and dimensions. IXGH90N60B3 ixys ref: g_90n60b3(85) 4-24-08 fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 80 90 30 35 40 45 50 55 60 65 70 75 80 85 90 i c - amperes t r - nanoseconds 25 26 27 28 29 30 31 32 33 34 t d(on) - nanoseconds t r t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 20. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 28 29 30 31 32 33 34 t d(on) - nanoseconds t r t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 480v i c = 60a i c = 90a fig. 18. inductive turn-on switching times vs. gate resistance 30 40 50 60 70 80 90 100 110 120 130 23456789101112131415 r g - ohms t r - nanoseconds 0 10 20 30 40 50 60 70 80 90 100 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 60a i c = 90a
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